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STD3NK100Z Datasheet(PDF) 4 Page - STMicroelectronics

Part # STD3NK100Z
Description  N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD3NK100Z Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF3NK100Z - STP3NK100Z - STD3NK100Z
4/16
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
1000
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125°C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 20V
±
10
µA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 50µA
3
3.75
4.5
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 1.25A
5.4
6
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
VDS =15V, ID = 1.25A
2.4
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
601
53
12
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS =0V, VDS =0V to 800V
15
pF
RG
Gate input resistance
f=1 MHz, open drain
8.6
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=800V, ID = 2.5A
VGS =10V
(see Figure 17)
18
3.6
9.2
nC
nC
nC



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