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STV250N55F3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STV250N55F3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() March 2009 Rev 4 1/12 12 STV250N55F3 N-channel 55 V, 1.5 m Ω, 250 A, PowerSO-10 STripFET™ Power MOSFET Features ■ Conduction losses reduced ■ Low profile, very low parasitic inductance Application ■ Switching applications Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram and connection diagram (top view) Type VDSS RDS(on) max ID STV250N55F3 55 V < 2.2 m Ω 250 A 1 10 PowerSO-10 Table 1. Device summary Order code Marking Package Packaging STV250N55F3 250N55F3 PowerSO-10 Tape and reel www.st.com |
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