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BAS19 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BAS19 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  BAS19,BAS20,BAS21 HIGH VOLTAGE SWITCHING DIODES PRV : 120 - 250 Volts IO : 200 mA FEATURES : * Small plastic SMD package * Switching speed: max. 50 ns * General application * Continuous reverse voltage: max. 100V, 150V, 200V * Repetitive peak reverse voltage: max. 120V, 200V, 250V * Pb / RoHS Free MECHANICAL DATA : * Case : SOT-23 plastic Case * BAS19 Marking Code: HA * BAS20 Marking Code: HB * BAS21 Marking Code: HC MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (Ta = 25 °C unless otherwise specified) Parameter Symbol BAS19 BAS20 BAS21 Unit Maximum Repetitive Peak Reverse Voltage VRRM 120 200 250 V Maximum Continuous Reverse Voltage VR 100 150 200 V Maximum Continuous Forward Current (Note 1) IF mA Maximum Non-repetitive Peak Forward Current t = 1 µs (square wave; Tj = 25 °C prior to surge) t = 100 µs t = 10 ms Total Power Dissipation (Note 1) Ptot mW Thermal Resistance Junction to Tie-point Rth j-tp K/W Thermal Resistance Junction to Ambient Rth j-a K/W Junction Temperature Range TJ °C Storage Temperature Range TSTG °C ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified. Parameter Symbol BAS19 BAS20 BAS21 Unit Forward Voltage IF = 100 mA IF = 200 mA Reverse Current VR = VRmax nA VR = VRmax, Tj = 150 °C µA Capacitance VR = 0 V, f = 1 MHz CD pF Reverse Recovery Time IF = 30 mA to IR = 30mA, RL =100 Ω,measure at IR =3 mA Note : (1) Device mounted on an FR4 printed circuit board. Page 1 of 2 Rev. 01 : May 22, 2006 VF IR Trr 1.00 1.25 100 100 5 200 ns V 50 150 A Test Condition 9 250 500 -65 to +150 330 IFSM 1.7 3 3 bottom view 1 2 1.02 0.89 2.04 1.78 3.10 2.70 Dimensions in millimeters 12 0.19 0.08 0.50 0.35 0.100 0.013 1.40 0.95 SOT-23 3 Certificate TH97/10561QM Certificate TW00/17276EM |
Similar Part No. - BAS19 |
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Similar Description - BAS19 |
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