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BAX12 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BAX12 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() BAX12, BAX12A CONTROLLED AVALANCHE DIODES FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward current: max.800 mA * Repetitive peak reverse current: max.600mA * Pb / RoHS Free MECHANICAL DATA : * Case : DO-35 Glass Case * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.13 gram (approximately) MAXIMUM RATINGS Symbol Value Unit VRRM 90 V VR 90 V Continuous Forward Current IF 400 mA Repetitive Peak Forward Current IFRM 800 A Non-repetitive Peak Forward Current t = 1 μs55 Square wave: Tj = 25 °C prior to surge t = 100 μs15 t = 10 ms 9 Total Power Dissipation , Ta = 25 °C Ptot 450 mW IRRM 600 mA Junction Temperature TJ 200 °C Storage Temperature Range TS -65 to + 200 °C Note : (1) Device mounted on an FR4 printed circuit-board; lead length 10 mm. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Min. Max. Unit Reverse Avalanche BAX12 IR = 1mA 120 170 V Breakdown Voltage BAX12A IR = 0.1mA 120 170 V VR = 90 V - 100 nA VR = 90 V, Tj = 150 °C - 100 μA Forward Voltage VF IF = 400 mA - 1.25 V Diode Capacitance Cd - 35 pF IF = 30mA , IR = 30mA RL = 100 Ω measured at IR = 3 mA Page 1 of 2 Rev. 01 : October 15, 2007 A Repetitive Peak Reverse Current V(BR)R IFSM ns 50 - Test Condition Reverse Recovery Time Trr f = 1MHz ; VR = 0 IR Parameter Reverse Current Repetitive Peak Reverse Voltage Continuous Reverse Voltage DO - 35 0.079(2.0 )max. 0.150 (3.8) max. 0.020 (0.52)max. Dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. Certificate TH97/10561QM Certificate TW00/17276EM |
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