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BAX12 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # BAX12
Description  CONTROLLED AVALANCHE DIODES
PDF  2 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

BAX12 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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BAX12, BAX12A
CONTROLLED AVALANCHE DIODES
FEATURES :
* Switching speed: max. 50 ns
* Continuous reverse voltage: max. 90V
* Repetitive peak reverse voltage: max. 90V
* Repetitive peak forward current: max.800 mA
* Repetitive peak reverse current: max.600mA
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-35 Glass Case
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.13 gram (approximately)
MAXIMUM RATINGS
Symbol
Value
Unit
VRRM
90
V
VR
90
V
Continuous Forward Current
IF
400
mA
Repetitive Peak Forward Current
IFRM
800
A
Non-repetitive Peak Forward Current
t = 1 μs55
Square wave: Tj = 25 °C prior to surge
t = 100 μs15
t = 10 ms
9
Total Power Dissipation , Ta = 25 °C
Ptot
450
mW
IRRM
600
mA
Junction Temperature
TJ
200
°C
Storage Temperature Range
TS
-65 to + 200
°C
Note :
(1) Device mounted on an FR4 printed circuit-board; lead length 10 mm.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Max.
Unit
Reverse Avalanche
BAX12
IR = 1mA
120
170
V
Breakdown Voltage
BAX12A
IR = 0.1mA
120
170
V
VR = 90 V
-
100
nA
VR = 90 V, Tj = 150 °C
-
100
μA
Forward Voltage
VF
IF = 400 mA
-
1.25
V
Diode Capacitance
Cd
-
35
pF
IF = 30mA , IR = 30mA
RL = 100 Ω measured at
IR = 3 mA
Page 1 of 2
Rev. 01 : October 15, 2007
A
Repetitive Peak Reverse Current
V(BR)R
IFSM
ns
50
-
Test Condition
Reverse Recovery Time
Trr
f = 1MHz ; VR = 0
IR
Parameter
Reverse Current
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
DO - 35
0.079(2.0 )max.
0.150 (3.8)
max.
0.020 (0.52)max.
Dimensions in inches and ( millimeters )
1.00 (25.4)
min.
1.00 (25.4)
min.
Certificate TH97/10561QM
Certificate TW00/17276EM


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