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BYT52D Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BYT52D Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  BYT52A - BYT52M PRV : 50 - 1000 Volts Io : 1.4 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. SYMBOL BYT 52A BYT 52B BYT 52D BYT 52G BYT 52J BYT 52K BYT 52M UNIT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum Reverse Voltage VR 50 100 200 400 600 800 1000 V 0.85 (on PC Board) 1.4 ( L = 10 mm, TL = 25°C) Maximum Peak Forward Surge Current, ( tp = 10 ms, half sinewave) Maximum Forward Voltage at IF = 1.0 A VF 1.3 V Maximum Reverse Current IR 10 (Tj = 25°C) µA ( VR = VRRM) IR(H) 150 (Tj = 150°C) µA Maximum Reverse Recovery Time (IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.) Maximum Junction Ambient Thermal Resistance ( L = 10mm, TL = Constant ) Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Note : (1) Reverse Recovery Test Conditions Page 1 of 2 Rev. 03 : October 5, 2005 RthJA 45 K/W Trr 200 ns FAST RECOVERY RECTIFIERS RATING A A IFSM IF(AV) 50 Maximum Average Forward Current D2 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) 0.284 (7.2) 0.268 (6.8) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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