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BYW32 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BYW32 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() BYW32 - BYW36 FAST RECOVERY RECTIFIER DIODES PRV : 200 - 600Volts Io : 2.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BYW32 BYW33 BYW34 BYW35 BYW36 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 200 300 400 500 600 V Maximum Maximum RMS voltage VRMS 140 210 280 350 420 V Maximum DC blocking voltage VDC 200 300 400 500 600 V Maximum Average Forward Current 0.375” (9.5mm) Lead Length at Ta=55 °C Maximum Peak Forward Surge Current 10ms single half sine-wave superimposed on rated load Maximum Instantaneous Forward Voltage at 2.0A VF 1.2 V Maximum DC reverse current at rated DC blocking voltage Typical Reverse Recovery Time (1) Trr 200 µs Thermal Resistance - Junction to Ambient (2) R θJA 100 C/W Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 200 °C Notes : (1) Test Conditions : IF = 0.5 A to IR = 1 A ; measured at Irr = 0.25 A (2) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted Page 1 of 2 Rev. 02 : March 25, 2005 IFSM 40 A IR 5.0 µA RATING IF(AV) 2.0 A D2 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) 0.284 (7.2) 0.268 (6.8) 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) * Pb / RoHS Free |
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