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BAS21AHT1D Datasheet(PDF) 2 Page - ON Semiconductor

Part # BAS21AHT1D
Description  Low Leakage Switching Diode
PDF  3 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BAS21AHT1D Datasheet(HTML) 2 Page - ON Semiconductor

  BAS21AHT1D Datasheet HTML 1Page - ON Semiconductor BAS21AHT1D Datasheet HTML 2Page - ON Semiconductor BAS21AHT1D Datasheet HTML 3Page - ON Semiconductor  
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BAS21AHT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150C)
IR
--
--
--
--
40
100
nAdc
mAdc
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
250
--
--
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
--
--
--
--
1000
1250
mV
Diode Capacitance
(VR = 0,f= 1.0MHz)
CD
--
--
5.0
pF
Reverse Recovery Time
(IF =IR =30 mAdc, RL = 100 Ω)
trr
--
50
--
ns
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF)of30mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp »trr
+10 V
2.0 k
820 Ω
0.1 mF
D.U.T.
VR
100 mH
0.1 mF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) =3.0 mA
OUTPUT PULSE
(IF =IR = 30 mA; MEASURED
at iR(REC) =3.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
FORWARD CURRENT (mA)
7000
REVERSE VOLTAGE (V)
5000
3000
5
0
2
1
6000
4000
6
5
10
20
50
100 200
1
2
3
4
TA =--55C
300
TA = 155C
TA =25C
TA =--55C
1
10
100
1000
1
200
400
600
800
1000
1200
155C
25C



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