M38045FALKP datasheet(85/131 Pages) RENESAS

85 / 131 page

Rev.1.00

Oct 27, 2008

Page 83 of 128

REJ03B0266-0100

3804 Group (Spec.L)

FLASH MEMORY MODE

The 3804 group (Spec.L)’s flash memory version has the flash

memory that can be rewritten with a single power source.

For this flash memory, three flash memory modes are available

in which to read, program, and erase: the parallel I/O and

standard serial I/O modes in which the flash memory can be

manipulated using a programmer and the CPU rewrite mode in

which the flash memory can be manipulated by the Central

Processing Unit (CPU).

This flash memory version has some blocks on the flash memory

as shown in Figure 81 and each block can be erased.

In addition to the ordinary User ROM area to store the MCU

operation control program, the flash memory has a Boot ROM

area that is used to store a program to control rewriting in CPU

rewrite and standard serial I/O modes. This Boot ROM area has

had a standard serial I/O mode control program stored in it when

shipped from the factory. However, the user can write a rewrite

control program in this area that suits the user’s application

system. This Boot ROM area can be rewritten in only parallel I/O

mode.

Summary

Table 15 lists the summary of the 3804 group (Spec.L) flash

memory version.

NOTE:

1. The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory.

This Boot ROM area can be erased and written in only parallel I/O mode.

NOTES:

1. VCC = AVCC = 2.7 V to 5.5 V, Topr = 0

°C to 60 °C, unless otherwise noted.

2. Definition of programming/erase count

The programming/erase count refers to the number of erase operations per block. For example, if block A is a 2 K-byte block and

2,048 1-byte writes are performed, all to different addresses, after which block A is erased, the programming/erase count is 1. Note

that for each erase operation it is not possible to perform more than one programming (write) operation to the same address

(overwrites prohibited).

3. This is the number of times for which all electrical characteristics are guaranteed after a programming or erase operation. (The

guarantee covers the range from 1 to maximum value.)

4. On systems where reprogramming is performed a large number of times, it is possible to reduce the effective number of overwrites

by sequentially shifting the write address, so that as much of the available area of the block is used up through successive

programming (write) operations before an erase operation is performed. For example, if each programming operation uses 16 bytes

of space, a maximum of 128 programming operations may be performed before it becomes necessary to erase the block in order to

continue. In this way the effective number of overwrites can be kept low. The effective overwrite count can be further reduced by

evenly dividing operations between block A and block B. It is recommended that data be retained on the number of times each

block has been erased and a limit count set.

5. If a block erase error occurs, execute the clear status register command followed by the block erase command a minimum of three

times and until the erase error is no longer generated.

Table 15 Summary of 3804 group (Spec.L)’s flash memory version

Item

Specifications

Power source voltage (VCC)VCC = 2.7 to 5.5 V

Program/Erase VPP voltage (VPP)VCC = 2.7 to 5.5 V

Flash memory mode

3 modes; Parallel I/O mode, Standard serial I/O mode, CPU

rewrite mode

Erase block division

User ROM area/Data ROM area

Refer to Figure 81.

Boot ROM area (1)

Not divided (4 Kbytes)

Program method

In units of bytes

Erase method

Block erase

Program/Erase control method

Program/Erase control by software command

Number of commands

5 commands

Number of program/Erase times

100(Max.)

ROM code protection

Available in parallel I/O mode and standard serial I/O mode

Table 16 Electrical characteristics of flash memory (program ROM)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

−

Byte programming time

VCC = 5.0 V, Topr = 25

°C

−

400

μs

−

Block erase time

(Block 1)

VCC = 5.0 V, Topr = 25

°C

−

0.5

(Block 2)

−

0.9

(Block 3)

−

1.3

(Block A, B)

−

0.3

M38045FALKP Datasheet(PDF) 85 Page - Renesas Technology Corp

M38045FALKP Datasheet(HTML) 85 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

Datasheet Download

Link URL