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BAS3010B Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BAS3010B Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page ![]() 2007-04-19 1 BAS3010B... Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Low forward voltage, low reverse current • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BAS3010B-03W Type Package Configuration Marking BAS3010B-03W SOD323 single 2/ red Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage2) VR 30 V Forward current2) IF 1 A Average rectified forward current (50/60Hz, sinus) IFAV 1 Repetitive peak forward current (tp ≤ 1 ms, D ≤ 0.5) IFRM 3.5 Non-repetitive peak surge forward current (t ≤ 10 ms) IFSM 10 Junction temperature Tj 150 °C Operating temperature range Top -65 ... 125 Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request 2 For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves. |
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