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BAS3010B Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BAS3010B
Description  Medium Power AF Schottky Diode
PDF  6 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BAS3010B Datasheet(HTML) 1 Page - Infineon Technologies AG

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2007-04-19
1
BAS3010B...
Medium Power AF Schottky Diode
• Forward current: 1 A
• Reverse voltage: 30 V
• Low forward voltage, low reverse current
• For high efficiency DC/DC conversion,
fast switching, protection and
clamping applications
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAS3010B-03W

Type
Package
Configuration
Marking
BAS3010B-03W
SOD323
single
2/ red
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage2)
VR
30
V
Forward current2)
IF
1
A
Average rectified forward current (50/60Hz, sinus) IFAV
1
Repetitive peak forward current
(tp ≤ 1 ms, D ≤ 0.5)
IFRM
3.5
Non-repetitive peak surge forward current
(t
≤ 10 ms)
IFSM
10
Junction temperature
Tj
150
°C
Operating temperature range
Top
-65 ... 125
Storage temperature
Tstg
-65 ... 150
1Pb-containing package may be available upon special request
2 For TA > 25°C the derating of VR and IF has to be considered. Please refer to the attached curves.


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