43098GI/8033KI, TS No.650-1/2

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Diffused Junction Silicon Diode

6.0A Single-Phase Bridge Rectifier

Ordering number:EN650C

DBA60

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

CB

0

6

A

B

DC

0

6

A

B

DE

0

6

A

B

Dt

i

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U

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a

t

l

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V

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s

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v

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R

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a

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PV M

R

0

0

1

–0

0

2

–0

0

4

–V

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r

r

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C

d

e

i

f

i

t

i

c

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R

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a

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v

AIO

→→

5

.

3A

→→

0

.

6A

t

n

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r

r

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C

d

r

a

w

r

o

F

e

g

r

u

SI

M

S

F

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c

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c

1

,

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v

a

w

e

n

i

s

z

H

0

5

→→

0

0

2A

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r

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t

a

r

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p

m

e

T

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o

i

t

c

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Jj

T

→→

0

5

1

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p

m

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T

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a

r

o

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Sg

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T

→→

0

5

1

+

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t

0

3

–

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

1091

[DBA60]

Electrical Characteristics at Ta=25˚C, per constituent element of bridge

Features

· Plastic molded structure.

· Glass passivation for high reliability.

˚C

˚C

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

C

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

e

g

a

t

l

o

V

d

r

a

w

r

o

FVF

IF

A

0

.

3

=

5

0

.

1V

t

n

e

r

r

u

C

e

s

r

e

v

e

RIR

VR

h

c

a

e

t

A

:V M

R

0

1

–A

µ

Note1 : Mounting Torque : 5kg·cm max

Ta=40˚C

Ta=40˚C, mounted on

80