BCM856S datasheet(2/9 Pages) INFINEON

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2007-04-27

BCM856S

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

140

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 A

V(BR)CEO

Collector-base breakdown voltage

IC = 10 µA, IE = 0 A

V(BR)CBO

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0 A

V(BR)CES

Emitter-base breakdown voltage

IE = 10 µA, IC = 0 A

V(BR)EBO

Collector-base cutoff current

VCB = 30 V, IE = 0 A

VCB = 30 V, IE = 0 A, TA = 150 °C

ICBO

0.015

µA

DC current gain-2)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

hFE

200

250

290

450

Collector-emitter saturation voltage2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

250

300

650

Base emitter saturation voltage2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

700

850

Base-emitter voltage-2)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

600

650

750

820

Matching

IB = 1 µA, VCE1 = VCE2 = 1.0V

IB = 100 µA, VCE1 = VCE2 = 1.0V

∆I

-10

1For calculation of RthJA please refer to Application Note Thermal Resistance

2Puls test: t < 300µs; D < 2%

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