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BCR153F Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BCR153F Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page  2007-08-21 1 BCR153... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1=2.2kΩ, R2=2.2kΩ) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BCR153F EHA07183 3 2 1 C E B R1 R 2 Type Marking Pin Configuration Package BCR153F WBs 1=B 2=E 3=C - - - TSFP-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Input forward voltage Vi(fwd) 20 Input reverse voltage Vi(rev) 10 Collector current IC 100 mA Total power dissipation BCR153F, TS ≤ 128°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2), BCR153F RthJS ≤ 90 K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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