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DCB010 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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DCB010 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() DCB010 No.1895-2/3 Reverse Voltage, VR -- V IR -- VR Forward Voltage, VF -- V IF -- VF IT02037 IT02038 Reverse Voltage, VR -- V C -- VR Forward Current, IF -- mA trr -- IF IT02039 IT02040 10 3 5 5 2 7 7 1.0 2 3 5 7 100 2 5 10--2 10--1 2 5 1.0 10 2 5 2 5 102 2 5 103 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 35 2 1.0 35 2 10 100 35 2 2 5 10--3 10--2 2 5 10--1 2 5 2 5 10 1.0 0 204060 80 100 Ta=100°C 75°C 50°C 25°C 0.4 0 0.8 1.2 1.6 2.0 2.4 1.0 23 5 0.1 23 5 10 100 23 5 2 f=1MHz Electrical Characteristics at Ta=25 °C Parameter Symbol Conditions min typ max Unit Forward Voltage VF1 IF=1mA 0.60 V VF2 IF=10mA 0.72 V VF3 IF=100mA 1.20 V Reverse Current IR1 VR=30V 0.1 µA IR2 VR=80V 0.5 µA Interterminal Capacitance C VR=0, f=1MHz 3.0 pF Reverse Recovery Time trr IF=10mA, VR=6V, RL=50Ω, Irr=0.1Irp 4.0 ns Marking : W6 Reverse Recovery Time Test Circuit DUT 50 Ω 0.01 µF 2k Ω 50 Ω 50ns --6V 0 IF=10mA 0.1Irp trr Irp |
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