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DCF010 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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DCF010 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 2 page ![]() 52098HA (KT)92995GI(KOTO)/5108TA, TS No.2789-1/2 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number:EN2789B DCF010 Silicon Epitaxial Planar Type (Anode Common) Ultrahigh-Speed Switching Diode r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m e g a t l o V d r a w r o FV 1 F IF A m 1 =1 6 . 0V V 2 F IF A m 0 1 =4 7 . 0V V 3 F IF A m 0 0 1 = 0 2 . 1V t n e r r u C e s r e v e R I 1 R VR V 0 3 = 1 . 0A µ I 2 R VR V 0 8 = 5 . 0A µ e c n a t i c a p a C l a n i m r e t r e t n IC VR z H M 1 = f , V 0 = 0 . 4F p e m i T y r e v o c e R e s r e v e Rr r tIF V , A m 0 1 = R R , V 6 = L 0 5 = Ω p r I 1 . 0 = r r I ,0 . 4s n r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e PV M R 5 8V e g a t l o V e s r e v e RVR 0 8V t n e r r u C d r a w r o F k a e PI M F g n i t a r t i n U 0 0 3A m g n i t a r l a t o T 0 5 4A m t n e r r u C d e i f i t c e R e g a r e v AIO g n o i t a r t i n U 0 0 1A m g n i t a t l a t o T 0 5 1A m ) s µ 1 ( t n e r r u C e g r u SI M S F g n i t a r t i n U 4A g n i t a r l a t o t 6A n o i t a p i s s i D r e w o P e l b a w o ll AP 0 0 1W m e r u t a r e p m e T n o i t c n u Jj T 5 2 1 e r u t a r e p m e T e g a r o t Sg t s T 5 2 1 + o t 5 5 – Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 1186A [DCF010] Electrical Characteristics at Ta = 25˚C Features · Ideally suited for use in hybrid ICs because of very small-sized package. · Fast switching speed. · Small interterminal capacitance. ˚C ˚C 1:Cathode1 2:Cathode2 3:Anode1, Anode2 SANYO:MCP Reverse Recovery Time Test Circuit Electrical Connection (Top view) |
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