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BSP322P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP322P Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page ![]() BSP322P Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 280 372 pF Output capacitance C oss -70 94 Reverse transfer capacitance C rss -34 51 Turn-on delay time t d(on) - 4.6 6.9 ns Rise time t r - 4.3 6.5 Turn-off delay time t d(off) - 21.2 31.8 Fall time t f - 8.3 12.5 Gate Charge Characteristics 2) Gate to source charge Q gs - 0.8 1.0 nC Gate to drain charge Q gd - 4.3 6.4 Gate charge total Q g - 12.4 16.5 Gate plateau voltage V plateau - 2.9 - V Reverse Diode Diode continuous forward current I S - - -1.0 A Diode pulse current I S,pulse - - -4.0 Diode forward voltage V SD V GS=0 V, I F=-1 A, T j=25 °C - 0.84 1.2 V Reverse recovery time t rr -47- ns Reverse recovery charge Q rr -84- nC 2) See figure 16 for gate charge parameter definition T C=25 °C Values V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=- 10 V, I D=-1 A, R G=6 Ω V DD=-80 V, I D=-1 A, V GS=0 to -10 V V R=50 V, I F=|I S|, di F/dt =100 A/µs Rev 1.03 page 3 2009-02-17 |
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