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BSP372 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP372 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 0.8 ...2.0 V Pin 1 Pin 2 Pin 3 Pin 4 G D S D Type VDS ID RDS(on) Package BSP372 100 V 1.7 A 0.31 Ω PG-SOT223 Type Tape and Reel Information BSP372 L6327: 1000 pcs/reel Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 28 ˚C ID 1.7 A DC drain current, pulsed TA = 25 ˚C IDpuls 6.8 Avalanche energy, single pulse ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C EAS 45 mJ Gate source voltage VGS ± 14 V Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation TA = 25 ˚C Ptot 1.8 W Pb-free lead plating; RoHS compliant • Marking BSP372 Packaging Non dry • Qualified according to AEC Q101 BSP372 Rev 2.0 1 2008-03-31 |
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