BSR316P datasheet(2/9 Pages) INFINEON

Part #	BSR316P

Description	SIPMOS Small-Signal-Transistor

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 9 page

BSR316P

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - ambient

R thJA

minimal footprint,

steady state

250

K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=-250 µA

-100

Gate threshold voltage

V GS(th)

V DS=V GS, I D=-170 µA

-2

-1.5

-1

Zero gate voltage drain current

I DSS

V DS=-100 V, V GS=0 V,

T j=25 °C

-0.1

-1

µA

V DS=-100 V, V GS=0 V,

T j=150 °C

-10

-100

Gate-source leakage current

I GSS

V GS=-20 V, V DS=0 V

-10

-100

Drain-source on-state resistance

R DS(on)

V GS=-4.5 V,

I D=-0.33 A

1.8

2.2

Ω

V GS=-10 V,

I D=-0.36 A

1.3

1.8

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=-0.29 A

0.3

0.5

Values

Rev 1.05

page 2

2009-02-16

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