 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
IRGI4060DPBF Datasheet(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRGI4060DPBF Datasheet(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  IRGI4060DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 28 μH, RG = 47 Ω Pulse width limited by max. junction temperature. Rθ is measured at TJ approximately 90°C Refer to AN-1086 for guidelines for measuring V(BR)CES safely Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V,Ic =100 μA f ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —0.66 — V/°C VGE = 0V, Ic = 250 μA ( -55 -150 oC ) f —1.50 1.72 IC = 7.5A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.75 — V IC = 7.5A, VGE = 15V, TJ = 125°C —1.81 — IC = 7.5A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 4.0 6.5 V VCE = VGE, IC = 250 μA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -12 —mV/°C VCE = VGE, IC = 1.0mA ( -55 -150 oC ) gfe Forward Transconductance — 5 — S VCE = 50V, IC = 7.5A, PW =80μs ICES —1.0 25 μA VGE = 0V,VCE = 600V — 400 — μA VGE = 0v, VCE = 600V, TJ =150°C VFM —2.18 3.00 V IF = 7.5A —1.60 — IF = 7.5A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ± 20 V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 19 29 IC = 7.5A Qge Gate-to-Emitter Charge (turn-on) — 4.3 6 nC VCC = 400V Qgc Gate-to-Collector Charge (turn-on) — 8.3 12 VGE = 15V Eon Turn-On Switching Loss — 47 89 IC = 7.5A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 141 248 μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C Etotal Total Switching Loss — 188 337 Energy losses include tail and diode reverse recovery td(on) Turn-On delay time — 29 38 IC = 7.5A, VCC = 400V tr Rise time — 16 25 ns RG = 47Ω, L=1mH, LS= 150nH td(off) Turn-Off delay time — 101 112 TJ = 25°C tf Fall time — 28 37 Eon Turn-On Switching Loss — 107 — IC = 7.5A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 196 — μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 150°C Etotal Total Switching Loss — 304 — Energy losses include tail and diode reverse recovery td(on) Turn-On delay time — 28 — IC = 7.5A, VCC = 400V tr Rise time — 17 —ns RG = 47Ω, L=1mH, LS= 150nH td(off) Turn-Off delay time — 118 — TJ = 150°C tf Fall time — 53 — Cies Input Capacitance — 537 — VGE = 0V Coes Output Capacitance — 47 — VCC = 30V Cres Reverse Transfer Capacitance — 16 — f = 1Mhz TJ = 150°C, IC = 30A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V Rg = 47 Ω, VGE = +20V to 0V VCC = 400V, Vp =600V RG = 47Ω, VGE = +15V to 0V Erec Reverse recovery energy of the diode — 102 — μJTJ = 150 oC trr Diode Reverse recovery time — 73 — ns VCC = 400V, IF = 7.5A Irr Peak Reverse Recovery Current — 11 — A VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH μs pF Conditions — Diode Forward Voltage Drop Collector-to-Emitter Leakage Current SCSOA Short Circuit Safe Operating Area 5 — |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
