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IRGI4064DPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRGI4064DPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGI4064DPbF 1 www.irf.com 10/01/09 E G n-channel C VCES = 600V IC = 8.0A, TC = 100°C tSC ≥ 5µs, TJ(max) = 150°C VCE(on) typ. = 1.51V Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI GC E Gate Collector Emitter PD - 97397A TO-220 Full-Pak G C E C Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 15 IC @ TC = 100°C Continuous Collector Current 8.0 ICM Pulse Collector Current, VGE = 15V 24 ILM Clamped Inductive Load Current, VGE = 20V c 32 A IF @ TC = 25°C Diode Continous Forward Current 15 IF @ TC = 100°C Diode Continous Forward Current 8.0 IFM Diode Maximum Forward Current d 32 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 38 W PD @ TC = 100°C Maximum Power Dissipation 15 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 3.29 °C/W RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 6.1 RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 65 |
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