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DSK10 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # DSK10
Description  1.0A Power Rectifier
PDF  2 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

DSK10 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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DSK10
No.2855-1/2
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Features
•
Designed for 5mm-pitch automatic insertion.
•
Small plastic molded structure(3mm body).
•
Peak reverse voltage : 100 to 1000V.
•
Average rectified current : 1.0A.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
DSK10B
DSK10C
DSK10E
Unit
Peak Reverse Voltage
VRM
100
200
400
V
Average Rectified Current
IO
→→
1.0
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
→→
45
A
Junction Temperature
Tj
→→
150
°C
Storage Temperature
Tstg
→→ --40 to +150
°C
Ratings
Parameter
Symbol
Conditions
DSK10G
DSK10L
Unit
Peak Reverse Voltage
VRM
600
1000
V
Average Rectified Current
IO
→
1.0
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
→
30
A
Junction Temperature
Tj
→
150
°C
Storage Temperature
Tstg
→ --40 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Voltage
VF
IF=1.0A (B, C, E)
1.1
V
IF=1.0A (G, L)
1.2
V
Reverse Current
IR
VR : at each VRM
10
µA
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN2855C
Package Dimensions
unit : mm
1168
[DSK10]
33103 TS IM TA-4136 / 91001 GI IM / 53098 HA (KT) / 92995 GI (KOTO) / D268 TA, TS
Diffused Junction Silicon Diode
Designed for 5mm-pitch Automatic Insertion
1.0A Power Rectifier
DSK10
1
2
cathode mark
1 : Cathode
2 : Anode
SANYO :
0.6
20.0
20.0
3.0


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