| Electronic Components Datasheet Search |
|
DSK10 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
|
|
|||||||||||||||||||||||||||||
DSK10 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
|
1 / 2 page ![]() DSK10 No.2855-1/2 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. Features • Designed for 5mm-pitch automatic insertion. • Small plastic molded structure(3mm body). • Peak reverse voltage : 100 to 1000V. • Average rectified current : 1.0A. Specifications Absolute Maximum Ratings at Ta=25 °C Ratings Parameter Symbol Conditions DSK10B DSK10C DSK10E Unit Peak Reverse Voltage VRM 100 200 400 V Average Rectified Current IO →→ 1.0 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle →→ 45 A Junction Temperature Tj →→ 150 °C Storage Temperature Tstg →→ --40 to +150 °C Ratings Parameter Symbol Conditions DSK10G DSK10L Unit Peak Reverse Voltage VRM 600 1000 V Average Rectified Current IO → 1.0 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle → 30 A Junction Temperature Tj → 150 °C Storage Temperature Tstg → --40 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Forward Voltage VF IF=1.0A (B, C, E) 1.1 V IF=1.0A (G, L) 1.2 V Reverse Current IR VR : at each VRM 10 µA SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN2855C Package Dimensions unit : mm 1168 [DSK10] 33103 TS IM TA-4136 / 91001 GI IM / 53098 HA (KT) / 92995 GI (KOTO) / D268 TA, TS Diffused Junction Silicon Diode Designed for 5mm-pitch Automatic Insertion 1.0A Power Rectifier DSK10 1 2 cathode mark 1 : Cathode 2 : Anode SANYO : 0.6 20.0 20.0 3.0 |
Similar Part No. - DSK10 |
|
Similar Description - DSK10 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |