SPP06N60C3 datasheet(2/11 Pages) INFINEON

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SPP06N60C3

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

1.7

K/W

R thJA

leaded

R thJA

SMD version, device

on PCB, minimal

footprint

SMD version, device

on PCB, 6 cm

2 cooling

area

-35-

Soldering temperature

T sold

1.6 mm (0.063 in.)

from case for 10 s

260

°C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

Avalanche breakdown voltage

V (BR)DS

V GS=0 V, I D=6.2 A

700

Gate threshold voltage

V GS(th)

V DS=V GS, I D=0.26 mA

2.1

3.9

Zero gate voltage drain current

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

0.1

µA

V DS=600 V, V GS=0 V,

T j=150 °C

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=3.9 A,

T j=25 °C

0.68

0.75

V GS=10 V, I D=3.9 A,

T j=150 °C

1.82

Gate resistance

R G

f =1 MHz, open drain

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=3.9 A

5.6

Values

Thermal resistance, junction -

ambient

Rev. 1.4

page 2

2009-11-27

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