BB199

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 1 — 1 December 2010

2 of 8

NXP Semiconductors

BB199

Variable capacitance diode for VCO and VCXO

3.

Ordering information

4.

Marking

5.

Limiting values

6.

Thermal characteristics

7.

Characteristics

Table 2.

Ordering information

Type number

Package

Name

Description

Version

BB199

SC-79

plastic surface-mounted package; 2 leads

SOD523

Table 3.

Marking codes

Type number

Marking code

BB199

K9

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

20

V

forward current

-

100

mA

total power dissipation

300

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to solder point

200

K/W

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

reverse current

-

-

1000

nA

-

-

5

nA

diode capacitance

f = 1 MHz

36.5

-

42.5

pF

11.8

-

13.8

pF

diode series resistance

-

0.25

0.5

Ω

diode capacitance ratio (0.5 V to 2 V)

f = 1 MHz

2.8

-

-