52098HA (KT)/7259TA, TS No.3154-1/3

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N-Channel Junction Silicon FET

Low-Frequency General-Purpose Amp,

Differential Amp Applications

Ordering number:EN3154

FC11

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

c

r

u

o

S

-

o

t

-

n

i

a

r

DV

X

S

D

0

4V

e

g

a

t

l

o

V

n

i

a

r

D

-

o

t

-

e

t

a

GV

S

D

G

0

4

–V

t

n

e

r

r

u

C

e

t

a

GIG

0

1A

m

t

n

e

r

r

u

C

n

i

a

r

DID

0

1A

m

n

o

i

t

a

p

i

s

s

i

D

r

e

w

o

P

e

l

b

a

w

o

ll

A

PD

t

i

n

u

1

0

0

2W

m

n

o

i

t

a

p

i

s

s

i

D

l

a

t

o

TPT

0

0

3W

m

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

0

5

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

0

5

1

+

o

t

5

5

–

Package Dimensions

unit:mm

2070

[FC11]

G1:Gate1

G2:Gate2

D2:Drain2

SC:Source Common

D1:Drain1

SANYO:CP5

Features

· Adoption of FBET process.

· Composite type with 2 transistors contained in the

CP package currently in use, improving the mount-

ing efficiency greatly.

· The FC11 is formed with two chips, being equivalent

to the 2SK771, placed in one package.

· Excellent in the thermal equilibrium and pair capa-

bility and suitable for use in differential amp.

· Common source.

Electrical Connection

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

˚C

Electrical Characteristics at Ta = 25˚C

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

C

s

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

n

i

a

r

D

-

o

t

-

e

t

a

GV

S

D

G

)

R

B

(

IG

V

,

A

µ

0

1

=

S

D

0

=0

4

–V

t

n

e

r

r

u

C

f

f

o

t

u

C

e

t

a

GI

S

S

G

V S

G

V

,

V

0

2

–

=

S

D

V

0

=0

.

1

–A

n

e

g

a

t

l

o

V

f

f

o

t

u

CV

)

f

f

o

(

S

G

V S

D

I

,

V

0

1

=

D

A

µ

1

=3

.

0

–9

.

0

–8

.

1

–V

p

o

r

D

e

g

a

t

l

o

V

e

c

r

u

o

S

-

o

t

-

e

t

a

G

∆V S

G

V

|

S

G

V

–

e

g

r

a

l

S

G

V

,

|

ll

a

m

s

S

D

I

,

V

0

1

=

D

A

m

1

=0

3V

m

t

n

e

r

r

u

C

n

i

a

r

DI

S

S

D

V S

D

V

,

V

0

1

=

S

G

V

0

=*

2

.

1*

0

.

6A

m

o

i

t

a

R

t

n

e

r

r

u

C

n

i

a

r

DV S

D

I

,

V

0

1

=

S

S

D

I

/

ll

a

m

s

S

S

D

e

g

r

a

l9

.

0

e

c

n

a

t

t

i

m

d

A

r

e

f

s

n

a

r

T

d

r

a

w

r

o

FY

|

s

f |V S

D

V

,

V

0

1

=

S

G

z

H

k

1

=

f

,

V

0

=5

.

40

.

9S

m

o

i

t

a

R

e

c

n

a

t

t

i

m

d

A

r

e

f

s

n

a

r

T

d

r

a

w

r

o

FV S

D

Y

|

,

V

0

1

=

s

f

Y

|

/

ll

a

m

s

|

s

f

e

g

r

a

l|9

.

0

e

c

n

c

a

t

i

c

a

p

a

C

t

u

p

n

Is

s

i

CV S

D

V

,

V

0

1

=

S

G

z

H

M

1

=

f

,

V

0

=0

.

9F

p

e

c

n

a

t

i

c

a

p

a

C

r

e

f

s

n

a

r

T

e

s

r

e

v

e

Rs

s

r

CV S

D

V

,

V

0

1

=

S

G

z

H

M

1

=

f

,

V

0

=1

.

2F

p

e

r

u

g

i

F

e

s

i

o

NF

NV S

D

R

,

V

0

1

=

g

k

1

=

Ω I

, D

z

H

k

1

=

f

,

A

m

1

=5

.

1B

d

0

.

3

D

2

.

10

.

6

E

5

.

2

Marking:11

The Specifications shown above are for each individual

transistor.