52098HA (KT)/5129MO, TS No.3115-1/3

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Composite Transistor

Low-Frequency

General-Purpose Amp Applications

Ordering number:EN3115

FC117

Package Dimensions

unit:mm

2067

[FC117]

E1:Emitter1

B1:Base1

C2:Collerctor2

E2:Emitter2

B2:Base2

C1:Collector1

SANYO:CP6

Features

· Composite type with 2 transistors contained in the

CP package currently in use, improving the mount-

ing efficiency greatly.

· The FC117 is formed with two chips, being equiva-

lent to the 2SA1753, placed in one package.

· Low collector to emitter saturation voltage.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

Note: The specifications shown above are for each individual transistor.

Marking:117

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

o

t

c

e

ll

o

CV

O

B

C

0

2

–V

e

g

a

t

l

o

V

r

e

t

t

i

m

E

-

o

t

-

r

o

t

c

e

ll

o

CV

O

E

C

5

1

–V

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

e

t

t

i

m

EV

O

B

E

5

–V

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CIC

0

0

5

–A

m

)

e

s

l

u

P

(

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CI P

C

1

–A

t

n

e

r

r

u

C

e

s

a

BIB

0

0

1

–A

m

n

o

i

t

a

p

i

s

s

i

D

r

o

t

c

e

ll

o

CPC

t

i

n

u

1

0

0

2W

m

n

o

i

t

a

p

i

s

s

i

D

r

e

w

o

P

l

a

t

o

TPT

0

0

3W

m

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

0

5

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

0

5

1

+

o

t

5

5

–

Electrical Characteristics at Ta = 25˚C

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

C

s

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

t

n

e

r

r

u

C

f

f

o

t

u

C

r

o

t

c

e

ll

o

CI

O

B

C

V B

C

I

,

V

5

1

–

=

E 0

=1

.

0

–A

µ

t

n

e

r

r

u

C

f

f

o

t

u

C

r

e

t

t

i

m

EI

O

B

E

V B

E

I

,

V

4

–

=

C 0

=1

.

0

–A

µ

n

i

a

G

t

n

e

r

r

u

C

C

D

h E

F

)

1

(V E

C

I

,

V

2

–

=

C

A

m

0

1

–

=0

6

10

6

5

h E

F

)

2

(V E

C

I

,

V

2

–

=

C

A

m

0

0

4

–

=0

7

o

i

t

a

R

n

i

a

G

t

n

e

r

r

u

C

C

Dh E

F

/

ll

a

m

s

(

)

e

g

r

a

l

V E

C

I

,

V

2

–

=

C

A

m

0

1

–

=8

.

08

9

.

0

t

c

u

d

o

r

P

h

t

d

i

w

d

n

a

B

-

n

i

a

GfT

V E

C

I

,

V

2

–

=

C

A

m

0

5

–

=0

0

4z

H

M

e

c

n

a

t

i

c

a

p

a

C

t

u

p

t

u

Ob

o

CV E

C

z

H

M

1

=

f

,

V

0

1

–

=5

.

6F

p

e

g

a

t

l

o

V

n

o

i

t

a

r

u

t

a

S

E

-

C

V

)

t

a

s

(

E

C

1IC

I

.

A

m

5

–

=

B

A

m

5

.

0

–

=5

1

–5

3

–V

m

V

)

t

a

s

(

E

C

2IC

I

.

A

m

0

0

2

–

=

B

A

m

0

1

–

=0

0

2

–0

6

3

–V

m

e

g

a

t

l

o

V

n

o

i

t

a

r

u

t

a

S

E

-

BV

)

t

a

s

(

E

B

IC

I

.

A

m

0

0

2

–

=

B

A

m

0

1

–

=5

9

.

0

–2

.

1

–V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

B

-

CV

O

B

C

)

R

B

(

IC

I

,

A

µ

0

1

–

=

E 0

=0

2

–V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

E

-

CV

O

E

C

)

R

B

(

IC

R

,

A

m

1

–

=

E

B =∞

5

1

–V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

B

-

EV

O

B

E

)

R

B

(

IE

I

,

A

µ

0

1

–

=

C 0

=5

–V

˚C