52098HA (KT)/6169MO/5129MO, TS No.3061-1/5

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

NPN Epitaxial Planar Silicon Transistor

High-Frequency General-Purpose Amp,

Differential Amp Applications

Ordering number:EN3061A

FC119

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

o

t

c

e

ll

o

CV

O

B

C

0

3V

e

g

a

t

l

o

V

r

e

t

t

i

m

E

-

o

t

-

r

o

t

c

e

ll

o

CV

O

E

C

0

2V

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

e

t

t

i

m

EV

O

B

E

5V

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CIC

0

3A

m

n

o

i

t

a

p

i

s

s

i

D

r

o

t

c

e

ll

o

CPC

t

i

n

u

1

0

0

2W

m

n

o

i

t

a

p

i

s

s

i

D

l

a

t

o

TPT

0

0

3W

m

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

0

5

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

0

5

1

+

o

t

5

5

–

Package Dimensions

unit:mm

2068

[FC119]

E1:Emitter1

E2:Emitter2

B2:Base2

C2:Collerctor2

B1:Base1

C1:Collector1

SANYO:CP6

Features

· Composite type with 2 transistors contained in the

CP package currently in use, improving the mount-

ing efficiency greatly.

· The FC119 is formed with two chips, being equiva-

lent to the 2SC2814, placed in one package.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

˚C

Note: The specifications shown above are for each individual transistor.

Marking:119

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

C

s

g

n

i

t

a

R

t

i

n

U

n

i

mp

y

tx

a

m

t

n

e

r

r

u

C

f

f

o

t

u

C

r

o

t

c

e

ll

o

CI

O

B

C

V B

C

I

,

V

0

1

=

E 0

=1

.

0A

µ

t

n

e

r

r

u

C

f

f

o

t

u

C

r

e

t

t

i

m

EI

O

B

E

V B

E

I

,

V

4

=

C 0

=1

.

0A

µ

n

i

a

G

t

n

e

r

r

u

C

C

D

h E

F

V E

C

I

,

V

6

=

C

A

m

1

=0

80

0

2

o

i

t

a

R

n

i

a

G

t

n

e

r

r

u

C

C

Dh E

F

-

/

ll

a

m

s

(

)

e

g

r

a

l

V E

C

I

,

V

6

=

C

A

m

1

=8

.

08

9

.

0

p

o

r

D

e

g

a

t

l

o

V

r

e

t

t

i

m

E

o

t

e

s

a

BV E

B

e

g

r

a

l

(

)

ll

a

m

s

-

V E

C

I

,

V

6

=

C

A

m

1

=0

.

15

1V

m

t

c

u

d

o

r

P

h

t

d

i

w

d

n

a

B

-

n

i

a

GfT

V E

C

I

,

V

6

=

C

A

m

1

=0

0

20

2

3z

H

M

e

c

n

a

t

i

c

a

p

a

C

r

e

f

s

n

a

r

T

e

s

r

e

v

e

Re

r

CV E

C

z

H

M

1

=

f

,

V

6

=5

9

.

02

.

1F

p

t

n

a

t

s

n

o

C

e

m

i

T

r

o

t

c

e

ll

o

C

o

t

e

s

a

Br b

b c

' c

V E

C

I

,

V

6

=

C

z

H

M

9

.

1

3

=

f

,

A

m

1

=0

2s

p

e

r

u

g

i

F

e

s

i

o

NF

NV E

C

I

,

V

6

=

C

z

H

M

0

0

1

=

f

,

A

m

1

=0

.

3B

d

n

i

a

G

r

e

w

o

PG

PV E

C

I

,

V

6

=

C

z

H

M

0

0

1

=

f

,

A

m

1

=5

2B

d

Electrical Characteristics at Ta = 25˚C