52098HA (KT)/53094TH (KOTO) 8-7599 No.3964-1/3

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

PNP Epitaxial Planar Silicon Composite Transistor

Low-Frequency General-Purpose Amp,

Driver Applications

Ordering number:EN3964

FC149

r

e

t

e

m

a

r

a

Pl

o

b

m

y

Ss

n

o

i

t

i

d

n

o

Cs

g

n

i

t

a

Rt

i

n

U

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

o

t

c

e

ll

o

CV

O

B

C

0

3

–V

e

g

a

t

l

o

V

r

e

t

t

i

m

E

-

o

t

-

r

o

t

c

e

ll

o

CV

O

E

C

5

2

–V

e

g

a

t

l

o

V

e

s

a

B

-

o

t

-

r

e

t

t

i

m

EV

O

B

E

5

1

–V

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CIC

0

5

1

–A

m

)

e

s

l

u

P

(

t

n

e

r

r

u

C

r

o

t

c

e

ll

o

CI P

C

0

0

3

–A

m

t

n

e

r

r

u

C

e

s

a

BIB

0

3

–A

m

n

o

i

t

a

p

i

s

s

i

D

r

o

t

c

e

ll

o

CPC

t

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n

u

1

0

0

2W

m

n

o

i

t

a

p

i

s

s

i

D

l

a

t

o

TPT

0

0

3W

m

e

r

u

t

a

r

e

p

m

e

T

n

o

i

t

c

n

u

Jj

T

0

5

1

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

Sg

t

s

T

0

5

1

+

o

t

5

5

–

Specifications

Absolute Maximum Ratings at Ta = 25˚C

1:Emitter 1

2:Base 1

3:Collector 2

4:Emitter 2

5:Base 2

6:Collector 1

SANYO:CP6

Package Dimensions

unit:mm

2067A

[FC149]

Features

· Composite type with 2 transistors contained in the

CP package currently in use, improving the mount-

ing efficiency greatly.

· The FC149 is formed with two chips, being equiva-

lent to the 2SA1813, placed in one package.

· Adoption of FBET process.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

˚C

˚C

Electrical Characteristics at Ta = 25˚C

Note:The specifications shown above are for each individual transistor.

Marking:149

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t

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a

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Pl

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b

m

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Ss

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d

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C

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R

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U

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mp

y

tx

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m

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r

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u

C

f

f

o

t

u

C

r

o

t

c

e

ll

o

CI

O

B

C

V B

C

I

,

V

0

2

–

=

E 0

=1

.

0

–A

µ

t

n

e

r

r

u

C

f

f

o

t

u

C

r

e

t

t

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m

EI

O

B

E

V B

E

I

,

V

0

1

–

=

E 0

=1

.

0

–A

µ

n

i

a

G

t

n

e

r

r

u

C

C

Dh E

F

V E

C

I

,

V

5

–

=

C

A

m

1

–

=0

0

50

0

80

0

2

1

o

i

t

a

R

n

i

a

G

t

n

e

r

r

u

C

C

Dh E

F

/

ll

a

m

s

(

)

e

g

r

a

l

V E

C

I

,

V

5

–

=

C

A

m

1

–

=7

.

08

9

.

0

t

c

u

d

o

r

P

h

t

d

i

w

d

n

a

B

-

n

i

a

GfT

V E

C

I

,

V

0

1

–

=

C

A

m

0

1

=0

1

2z

H

M

e

c

n

a

t

i

c

a

p

a

C

t

u

p

t

u

Ob

o

CV B

C

z

H

M

1

=

f

,

V

0

1

–

=6

.

2F

p

e

g

a

t

l

o

V

n

o

i

t

a

r

u

t

a

S

E

-

CV

)

t

a

s

(

E

C

IC

I

,

A

m

0

5

–

=

B

A

m

1

–

=5

1

.

0

–3

.

0

–V

e

g

a

t

l

o

V

n

o

i

t

a

r

u

t

a

S

E

-

BV

)

t

a

s

(

E

B

IC

I

,

A

m

0

5

–

=

B

A

m

1

–

=8

7

.

0

–1

.

1

–V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

B

-

CV

O

B

C

)

R

B

(

IC

I

,

A

µ

0

1

–

=

E 0

=0

3

–V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

E

-

CV

O

E

C

)

R

B

(

IC

R

,

A

m

1

–

=

E

B =∞

5

2

–V

e

g

a

t

l

o

V

n

w

o

d

k

a

e

r

B

B

-

EV

O

B

E

)

R

B

(

IE

I

,

A

µ

0

1

–

=

C=0

5

1

–V