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FC151 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FC151 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 5 page ![]() 52098HA (KT)/41594TH(KOTO) X-7850 No.4652-1/5 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Current Mirror Circuit Applications Ordering number:EN4652 FC151 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 2 –V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 5 1 –V e g a t l o V e s a B - o t - r e t t i m EV O B E 3 –V t n e r r u C r o t c e ll o CIC 0 5 –A m n o i t a p i s s i D r o t c e ll o CPC t i n u 1 0 0 2W m n o i t a p i s s i D l a t o TPT 0 0 3W m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – Specifications Absolute Maximum Ratings at Ta = 25˚C 1:Emitter 1 2:Base 1 3:Emitter 2 4:Collector 2 5:Base 2 6:Collector1 SANYO:CP6 Package Dimensions unit:mm 2103A [FC151] Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC151 is formed with two chips, being equiva- lent to the 2SA1669, placed in one package. · Excellent in thermal equilibrium and pair capability. Electrical Connection ˚C ˚C Electrical Characteristics at Ta = 25˚C Note:The specifications shown above are for each individual transistor. However, the specifications of hFE(small/large) and hFE(large-small) are for pair capability Marking:151 1:Emitter 1 2:Base 1 3:Emitter 2 4:Collector 2 5:Base 2 6:Collector1 r e t e m a r a Pl o b m y Ss n o t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 5 1 – = E 0 =1 . 0 –A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 2 – = E 0 =1 . 0 –A µ n i a G t n e r r u C C Dh E F V E C I , V 0 1 – = C A m 5 – =0 20 0 1 o i t a R n i a G t n e r r u C C Dh E F / ll a m s ( ) e g r a l V E C I , V 0 1 – = C A m 5 – =7 . 03 9 . 0 e c n e r e f f i D e g a t l o V E - BV E B - e g r a l ( ) ll a m s V E C I , V 0 1 – = C A m 5 – =0 . 35 1V m t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 0 1 – = C A m 5 – =5 . 10 . 3z H G e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 1 – =0 . 15 . 1F p n i a G r e f s n a r T d r a w r o F| e 1 2 S |V E C I , V 0 1 – = C z H G 9 . 0 = f , A m 5 – =5 B d e r u g i F e s i o NF NV E C I , V 0 1 – = C z H G 9 . 0 = f , A m 3 – =0 . 2B d |
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