52098HA (KT)/41594TH (KOTO) B8-0026 No.4658-1/4

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

TR:PNP Epitaxial Planar Silicon Transistor

SBD:Schottky Barrier Diode

DC-DC Converter Applications

Ordering number:EN4658

FC601

Specifications

Absolute Maximum Ratings at Ta = 25˚C

1:Collector

2:Cathode

3:Anode

4:Emitter

5:Base

SANYO:CP5

Package Dimensions

unit:mm

2105A

[FC601]

Features

· Composed of a Shottky barrier diode and a PNP

transistor with built-in resistors, and contained in one

CP package, resulting in greatly improved circuit-

board using efficiency.

· The FC601 is composed of an equivalent chip to the

SB007-03CP and an equivalent chip to the RA104C

(R1=10k

Ω, R2=47kΩ).

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Marking:601

Electrical Connection

1:Collector

2:Cathode

3:Anode

4:Emitter

5:Base

˚C

˚C

˚C

˚C

Continued on next page.