22898HA (KT)/90696GI (KOTO) BX-0240 No.4516-1/2

FC810

Ordering number :EN4516A

15V, 700mA Rectifier

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Silicon Barrier Diode

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Specifications

Absolute Maximum Ratings at Ta = 25˚C (Value per element)

Package Dimensions

unit:mm

1236A

[FC810]

1:Cathode

2:Cathode

3:Anode

4:No Contact

5:Anode

SANYO:CP5

· Marking:810

Electrical Characteristics at Ta = 25˚C (Value per element)

trr Test Circuit

Electrical Connection

˚C

˚C

˚C/W

Features

· Low forward voltage (VF max=0.55V) .

· Fast reverse recorvery time (trr max=10ns) .

· Composite type with 2 diodes contained in the CP

package currently in use, saving the mounting space

greatly.

· The FC810 is formed with two chips, each being

equivalent to the SB07-015C, placed in one package.

1:Cathode

2:Cathode

3:Anode

4:No Contact

5:Anode