52098HA (KT)/41594HO (KOTO) BX-0511 No.4697-1/3

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

NPN Epitaxial Planar Silicon Composite Transistors

High-Frequency Amp,

Differential Amp Applications

Ordering number:EN4697

FP201

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–

Specifications

Absolute Maximum Ratings at Ta = 25˚C

1:Base (NPN TR)

2:Collector (NPN TR)

3:Emitter Common

4:Collector (NPN TR)

5:Base (NPN TR)

6:Collector (NPN TR)

7:Collector (NPN TR)

SANYO:PCP5

(Bottom view)

Package Dimensions

unit:mm

2107A

[FP201]

Features

· Composite type with 2 transistors contained in the

PCP package currently in use, improving the mount-

ing efficiency greatly.

· The FP201 is formed with two chips, being equiva-

lent to the 2SC4504, placed in one package.

· Excellent in thermal equilibrium and pair capability.

Electrical Connection

Note:The specifications shown above are for each individual transistor.

However, the DC Current Gain Ratio and Base Emitter to Voltage Difference are for the paired transistors.

Marking:201

˚C

˚C

×0.8mm)

Electrical Characteristics at Ta=25˚C

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.

02

.

1V

1:Base (NPN TR)

2:Collector (NPN TR)

3:Emitter Common

4:Collector (NPN TR)

5:Base (NPN TR)

6:Collector (NPN TR)

7:Collector (NPN TR)

(Top view)

×0.8mm) 1unit