52098HA (KT)/N2394TS (KOTO) B8-0025 No.4657-1/4

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

TR:NPN Epitaxial Planar Silicon Transistor

SBD:Schottky Barrier Diode

DC-DC Converter Applications

Ordering number:EN4657

FP303

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Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2099A

[FP303]

Features

· Composite type with NPN transistor and Schottoky

barrier diode facilitates high-density mounting.

· The FP303 is composed of chips equivalent to the

2SD1623 and SB05-05CP, which are placed in one

package.

˚C

˚C

×0.8mm)

1:Base

2:Collector

3:Emitter

4:Cathode

5:Anode

6:Cathode

7:Collector

SANYO:PCP5

(Bottom view)

˚C

Electrical Connection

Continued on next page.

˚C

1:Base

2:Collector

3:Emitter Common

4:Cathode

5:Anode

6:Cathode

7:Collector

(Top View)