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FTD2011 Datasheet(PDF) 3 Page - Sanyo Semicon Device |
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FTD2011 Datasheet(HTML) 3 Page - Sanyo Semicon Device |
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3 / 4 page ![]() No.6072-3/4 FTD2011 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.3 1.6 SW Time - I D A S O PD - Ta tf tr td(on) 2 3 5 7 2 3 5 7 2 3 5 7 23 5 7 2 2 35 7 7 2 3 5 7 2 3 5 7 2 3 5 2 3 5 7 0 20 40 60 80 100 120 140 160 <10 µs VDD=10V ID=5A Operation in this area is limited by RDS(on). 1ms 10ms 100m s DC operation 23 5 7 2 2 33 57 1.0 10 100 1000 0.01 0.1 1.0 10 0.1 1.0 10 0.1 1.0 10 Ciss, Coss, Crss - VDS VGS - Qg f = 1MHz VDS=10V 2 3 5 7 2 3 5 7 2 3 5 7 Ciss Coss Crss 02 4 6 8 10 12 14 16 18 20 10 100 1000 10000 0 1 4 8 12 16 20 24 28 32 0 2 3 4 5 6 7 8 9 10 Drain-to-Source Voltage,VDS –V Total Gate Charge, Qg – nC Drain-to-Source Voltage,VDS –V Drain Current, ID –A Ambient Temperature, Ta – °C Ta= 25˚C 1pulse 1unit Mounted on a ceramic board (1000mm 2 ×0.8mm) Mounted on a ceramic board (1000mm 2 ×0.8mm) Total Dissipation 1 unit R DS(on) - Ta I F - VSD 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 ID=2A,V GS =2.5V ID=4A,V GS =4V -60 0 10 20 30 40 50 60 -40 -20 0 20 40 60 80 100 120 160 140 0.01 0.1 1.0 10 100 0.2 0.4 0.6 0.8 1.0 1.2 0.3 0.5 0.7 0.9 1.1 Ambient Temperature, Ta – °C Diode Forward Voltage, VSD –V |
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