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FW103 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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FW103 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 3 page ![]() Continued from preceding page. Parameter Symbol Conditions Ratings min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns Rise Time tr ″ 110 ns Turn-OFF Delay Time td(off) ″ 330 ns Fall Time tf ″ 170 ns Diode Forward Voltage VSD IS=–3A, VGS=0 –1.0 –1.2 V Switching Time Test Circuit Electrical Connection (Top view) FW103 No.5305-2/3 ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, A S O 10 1.0 2 3 5 7 2 3 5 2 3 5 7 1.0 0.1 10 7 7 2 5 3 7 2 5 3 7 2 5 3 5 IDP ID 1m s 10 ms 100 ms 1.0 1.2 1.4 1.6 1.8 0.8 0.6 0.4 0.2 0 0 0.6 0.8 1.0 0.4 0.2 1.2 1.4 1.6 1.8 1.7 P D(FET 2) – P D(FET1) Drain-to-Source Voltage, VDS – V Operation in this area is limited by RDS(on). 10 µs 100µ s Mounted on a ceramic board (1000mm2 ×0.8mm) To tal dis sip atio n Per uni t d issi pati on M ou nte d on a c era m ic bo ard (10 00 m m 2 × 0.8 m m ) M oun ted on a ce ram ic b oard (10 00m m 2 ×0 .8m m) Allowable Power Dissipation, PD(FET1) – W 80 100 120 140 160 60 40 20 0 0 0.8 1.2 0.4 1.6 1.7 2.0 2.4 P D – Ta Ambient Temperature, Ta – °C Ta=25 °C 1pulse 1unit |
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