52098HA (KT)/41095TS (KOTO) TA-0134 No.5052-1/4

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

TR:PNP Epitaxial Planar Silicon Transistor

SBD:Schottky Barrier Diode (Twin type · Cathode Common)

DC-DC Converter

Ordering number:EN5052

FX802

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Package Dimensions

unit:mm

2126

[FX802]

1:Base

2:Emitter

3:Anode1

4:Anode2

5:Cathode

6:Collector

SANYO:XP6

(Bottom view)

Features

· Complex type of a low saturation voltage, high

speed switching and large current PNP transistor and

a fast recovery and low forward voltage Schottky

barrier diode facilitating high-sensity mounting.

· The FX802 is composed of 2 chips, one being

equivalent to the 2SB1302 and the other the

SB20W03P, placed in one packae.

Electrical Connection

· Marking:802

Specifications

Absolute Maximum Ratings at Ta = 25˚C

˚C

˚C

Continued on next page.

˚C

1:Base

2:Emitter

3:Anode1

4:Anode2

5:Cathode

6:Collector

(Top view)

×0.8mm) 1 unit