2SA1742 datasheet(3/8 Pages) RENESAS

3 / 8 page

Document No. D14858EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SA1742

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

2002

The 2SA1742 is a power transistor developed for high-speed

switching and features a high hFE at low VCE(sat). This transistor is ideal

for use as a driver in DC/DC converters and actuators.

addition,

small

resin-molded

insulation

type

package

contributes to high-density mounting and reduction of mounting cost.

FEATURES

• High hFE and low VCE(sat):

hFE

≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A

VCE(sat)

≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A

• Full-mold package that does not require an insulating board or

bushing

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

−100

Collector to emitter voltage

VCEO

−60

Emitter to base voltage

VEBO

−7.0

Collector current (DC)

IC(DC)

−7.0

Collector current (pulse)

IC(pulse)

≤ 300

µs,

duty cycle

≤ 10%

−14

Base current (DC)

IB(DC)

−3.5

TC = 25

°C

Total power dissipation

TA = 25

°C

2.0

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

°C

ORDERING INFORMATION

Part No.

Package

2SA1742

Isolated TO-220

(Isolated TO-220)

2SA1742 Datasheet(PDF) 3 Page - Renesas Technology Corp

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