2SB772 datasheet(3/5 Pages) RENESAS

3 / 5 page

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

PNP SILICON POWER TRANSISTOR

2SB772

PNP SILICON POWER TRANSISTOR

DATA SHEET

Document No. D17118EJ3V0DS00 (3rd edition)

Date Published April 2008 NS

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2004

DESCRIPTION

The 2SB772 is PNP silicon transistor suited for the output stage of 3 W

audio amplifier, voltage regulator, DC-DC converter and relay driver.

FEATURES

• Low saturation voltage

VCE(sat)

≤ −0.5 V (IC = −2.0 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE

hFE2 = 60 to 400 (VCE =

−2.0 V, IC = −1.0 A)

• Less cramping space required due to small and thin package (TO-

126 (MP-5)) and reducing the trouble for attachment to a radiator.

No insulator bushing required.

ABSOLUTE MAXIMUM RATINGS

Maximum Temperature

Storage Temperature

−55 to +150°C

Junction Temperature

150

°C Maximum

Maximum Power Dissipation

Total Power Dissipation (TA = 25

°C)

1.0 W

Total Power Dissipation (TC = 25

°C)

10 W

Maximum Voltages and Currents (TA = 25

°C)

VCBO

Collector to Base Voltage

−40 V

VCEO

Collector to Emitter Voltage

−30 V

VEBO

Emitter to Base Voltage

−5.0 V

IC(DC)

Collector Current (DC)

−3.0 A

IC(pulse)

Note Collector Current (pulse)

−7.0 A

Note Pulse Test PW

≤ 350

μs, Duty Cycle ≤ 2%

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC Current Gain

hFE1

VCE =

−2.0 V, IC = −20 mA

Note

220

DC Current Gain

hFE2

VCE =

−2.0 V, IC = −1.0 A

Note

160

400

Gain Bandwidth Product

VCE =

−5.0 V, IC = −0.1 A

MHz

Output Capacitance

Cob

VCB =

−10 V, IE = 0 A, f = 1.0 MHz

Collector Cutoff Current

ICBO

VCB =

−30 V, IE = 0 A

−1.0

μA

Emitter Cutoff Current

IEBO

VEB =

−3.0 V, IC = 0 A

−1.0

μA

Collector Saturation Voltage

VCE(sat)

IC =

−2.0 A, IB = −0.2 A

Note

−0.3

−0.5

Base Saturation Voltage

VBE(sat)

IC =

−2.0 A, IB = −0.2 A

Note

−1.0

−2.0

Note Pulse Test: PW

≤ 350

μs, Duty Cycle ≤ 2%

CLASSIFICATION OF hFE2

Rank

Range

60 to 120

100 to 200

160 to 320

200 to 400

Remark Test Conditions: VCE =

−2.0 V, IC = −1.0 A

PACKAGE DRAWING (Unit: mm)

8.5 MAX.

3.2±0.2

12 TYP.

2.3 TYP.

1.2 TYP.

0.55

2.8 MAX.

0.8

+0.08

–0.05

+0.08

–0.05

1: Emitter

2: Collector: connected to mounting plane

3: Base

<R>

2SB772 Datasheet(PDF) 3 Page - Renesas Technology Corp

2SB772 Datasheet(HTML) 3 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5

Datasheet Download

Link URL