IPB60R199CP_09 datasheet(1/10 Pages) INFINEON

Part #	IPB60R199CP

Description	CoolMOS Power Transistor

PDF	10 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPB60R199CP

CoolMOS

® Power Transistor

Features

• Lowest figure-of-merit RONxQg

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching topologies, for Server and Telecom

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=6.6 A, V DD=50 V

436

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=6.6 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

±30

139

-55 ... 150

0.66

6.6

50

±20

Value

16

10

51

V DS @ Tj,max

650

V

R DS(on),max

0.199

Ω

Q g,typ

3

2

nC

Product Summary

Type

Package

Ordering Code

Marking

IPB60R199CP

PG-TO263

SP000223256

6R199P

PG-TO263

Rev. 2.1

page 1

2009-04-06

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IPB60R199CP Datasheet(PDF) 1 Page - Infineon Technologies AG

IPB60R199CP Datasheet(HTML) 1 Page - Infineon Technologies AG

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