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AHV9001 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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AHV9001 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T A = 25 °C NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA 22 V IR VR = 20 V 0.10 µA Ct VR = 4.0 V f = 1.0 MHz 18 20 22 pF Ct VR = 8.0 V f = 1.0 MHz 7.5 8.5 10.5 pF Ct VR = 20 V f = 1.0 MHz 3.1 3.5 3.9 pF CT4/CT20 f = 1.0 MHz 5.4 6.0 6.6 --- Q VR = 1.0 V f = 1.0 MHz 220 --- Notes: 1. DO-7 glass package for HF, VHF and UHF hyperabrupts. 2. Style 51 ceramic package for MICROWAVE Hyperabrupts. SILICON HYPERABRUPT VARACTOR DIODE AHV9001 PACKAGE STYLE 51 DESCRIPTION: The ASI AHV9001 is a Silicon HyperabruptTuning Varactor Diode for VHF operation. FEATURES INCLUDE: • Octave tunning from 4 to 20 V • Ultra high Q • Linnear frequency performance versus voltage MAXIMUM RATINGS IF 50 mA VR 22 V PDISS 280 mW @ TC = 25 °C TJ -55 °C to +125 °C TSTG -55 °C to +125 °C |
Similar Part No. - AHV9001 |
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Similar Description - AHV9001 |
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