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LA1065M Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LA1065M Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 8 page ![]() LA1065M No.3312-2/8 Operating Conditions at Ta=25°C Parameter Symbol Conditions Ratings Unit Recommended supply voltage VCC 8 V Operating voltage range VCC op 7 to 12 V Operation Characteristics at Ta=25°C, VCC=8V, f=100kHz sine wave Parameter Symbol Conditions Ratings min typ max Unit Current drain ICC No input, not including pin 9 current 10 16 22 mA Pin 9 high-level voltage V9H 1k Ω resistance between pin 9 and GND 5.0 6.0 7.5 V Noise amplifier gain Gsub Vsub in=10mVrms pin 6 output 33 36 39 dB Noise amplifier gain GV1 Vmain in=Vsub in=1mVrms pin 6 output 33 36 39 dB GV2 Vmain in=Vsub in=100mV pin 6 output 6 10 14 dB Noise detection sensitivity NDS Noise AGC off 8 12 16 mVrms Noise count number NCN Difference between MAIN and SUB noise 4 Gate time 1 tG Noise AGC off 500 620 740 µs Repeat cycle of pin 4 waveform Pin 6 voltage V6 Vmain=Vsub=200mVrms 0.4 1.1 2.0 V Pin 5 voltage V5 Vsub=100mVrms 2.50 2.85 3.20 V Strong field detection level V17 0.7 1.1 1.5 V Medium field detection level V14 2.4 2.7 3.1 V Weak field detection level V13 1.7 2.1 2.4 V S meter switch residual V12 Input=0V 130 mVrms Equivalent Circuit Block Diagram |
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