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AVF100 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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AVF100 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 2 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/2 Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCER IC = 50 mA RBE = 10 Ω 65 V BVEBO IE = 1.0 mA 3.5 V ICES VCE = 50 V 100 mA hFE VCE = 5.0 V IC = 100 mA 10 200 --- Cob VCB = 28 V f = 1.0 MHz 80 pF PG ηηηη C VCC = 40 V POUT = 90 W f = 1025 - 1150 MHz PIN = 13 W 8.4 35 dB % Pulse Width = 10 µsec, Duty Cycle = 1 % NPN SILICON RF POWER TRANSISTOR AVF100 DESCRIPTION: The ASI AVF100 is a high power Class-C transistor designed for IFF/DME/TACAN Applications in 1025-1150 MHz. FEATURES: • 50 V operation • Internal Input/Output Matching Networks • P G = 8.4 dB at 90 W/1090 MHz • Omnigold™ Metalization System • Common Base configuration MAXIMUM RATINGS IC 10 A VCBO 65 V VCES 65 V PDISS 292 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθ JC 0.60 °C/W PACKAGE STYLE .250 2L FLG (B) ORDER CODE: ASI10569 MINIMUM inches / mm 1.050 / 26.67 .120 / 3.05 .245 / 6.22 .552 / 14.02 .790 / 20.07 B C D E F G A MAXIMUM .255 / 6.48 .572 / 14.53 .810 / 20.57 .140 / 3.56 inches / mm H .003 / 0.08 .007 / 0.18 DIM K I J .052 / 1.32 .072 / 1.83 .130 / 3.30 .088 x 45° CHAMFER A B Ø D E F G H I K C J .100 X 45° .095 / 2.41 .105 / 2.67 .285 / 7.24 .210 / 5.33 .120 / 3.05 |
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