A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL MAXIMUM

UNITS

65

V

1.0

µA

1.0

µA

2.0

3.0

4.0

V

3.0

4.0

5.0

V

0.9

1.2

V

1.6

1.8

S

f = 1.0 MHz

56

28

2.5

pF

η

f = 945 MHz

11

50

14

58

dB

%

RF POWER FET TRANSISTOR

MRF182

PACKAGE STYLE .350 2L FLG

DESCRIPTION:

The ASI MRF182 is an RF power field

effect transistor, N-Channel

Enhancement-Mode lateral MOSFET.

FEATURES INCLUDE:

• Bradband performance from HF to 1

GHz

• Omnigold™ Metalization System

• High Gain, Rugged device.

MAXIMUM RATINGS

65 V

±20 V

-65 °C to +200 °C

-65 °C to +150 °C

θ

JC

1.75 °C/W