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MRF464 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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MRF464 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. E 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 65 V BVCEO IC = 100 mA 35 V BVEBO IE = 10 mA 2.5 V ICES VCE = 28 V 10 mA hFE VCE = 5.0 V IC = 5.0 A 10 200 --- COB VCB = 28 V f = 1.0 MHz 200 pF GPE η C VCC = 28 V f = 30.000 & 30.001 MHz POUT = 80 W(PEP) 15 40 dB % NPN SILICON RF POWER TRANSISTOR MRF464 DESCRIPTION: The ASI MRF464 is Designed for 28 Volt Power Amplifier Applications up to 30 MHz. FEATURES INCLUDE: • P G = 15 dB Min. @ 30MHz & 80W • Common Emitter MAXIMUM RATINGS IC 10 A VCB 65 V VCE 35 V VEB 2.5 V PDISS 250 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θ JC 0.7 °C/W PACKAGE STYLE .500" 4L FLANGE 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER |
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Similar Description - MRF464 |
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