07N03LB datasheet(2/9 Pages) INFINEON

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IPP07N03LB G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

1.8

K/W

SMD version, device on PCB

R thJA

minimal footprint

6 cm

2 cooling area5)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=40 µA

1.2

1.6

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

0.1

µA

V DS=30 V, V GS=0 V,

T j=125 °C

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=30 A

7.7

9.6

Ω

V GS=10 V, I D=50 A

5.5

6.6

Gate resistance

R G

1.2

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=50 A

4) T

j,max=150 °C and duty cycle D <0.25 for V GS<-5 V

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

5 Diagrams are related to straight lead versions.

Values

2) Current is limited by bondwire; with anR

thJC=1.8 K/W the chip is able to carry 84 A.

3) See figure 3

Rev. 0.95

page 2

2008-05-06

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