A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

SYMBOL

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

UNITS

45

Ω

45

V

3.5

V

1.0

mA

30

300

ηηηη

f = 1025 to 1150 MHz

PULSE WIDTH

= 10

µS

DUTY CYCLE

= 1.0%

9.0

4.0

35

dB

W

%

NPN SILICON RF MICROWAVE TRANSISTOR

MSC1004M

DESCRIPTION:

The

Class-C, Common Base Device

Designed for IFF, DME driver

Applications.

FEATURES INCLUDE:

• Gold Metalization

• Input Matching

• Emitter Ballasting

MAXIMUM RATINGS

650 mA

32 V

-65

-65

θθθθ

JC

5.0

PACKAGE STYLE .250 SQ 2L FL

1 = COLLECTOR

2 = EMITTER

3 = BASE

1

2

3