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IRFP4232PBF Datasheet(PDF) 2 Page - International Rectifier |
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IRFP4232PBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRFP4232PbF 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 180 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 30 35.7 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -15 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 5.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 95 ––– ––– S Qg Total Gate Charge ––– 160 240 nC Qgd Gate-to-Drain Charge ––– 60 ––– td(on) Turn-On Delay Time ––– 37 ––– tr Rise Time ––– 100 ––– ns td(off) Turn-Off Delay Time ––– 64 ––– tf Fall Time ––– 63 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 7290 ––– Coss Output Capacitance ––– 610 ––– pF Crss Reverse Transfer Capacitance ––– 240 ––– Coss eff. Effective Output Capacitance ––– 420 ––– LD Internal Drain Inductance ––– 5.0 ––– Between lead, nH 6mm (0.25in.) LS Internal Source Inductance ––– 13 ––– from package Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energyd mJ EAR Repetitive Avalanche Energy mJ VDS(Avalanche) Repetitive Avalanche Voltageà V IAS Avalanche Current Ãd A Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– 60 (Body Diode) A ISM Pulsed Source Current ––– ––– 240 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 240 360 ns Qrr Reverse Recovery Charge ––– 1230 1850 nC ––– 310 ––– ––– 950 ––– 43 42 ––– ––– 300 ––– Typ. Max. ƒ = 1.0MHz, See Fig.5 ––– 220 TJ = 25°C, IF = 42A, VDD = 50V di/dt = 100A/µs e TJ = 25°C, IS = 42A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 42A e VDS = VGS, ID = 250µA VDS = 200V, VGS = 0V VGS = 0V, VDS = 0V to 200V VDS = 200V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 0V L = 220nH, C= 0.4µF, VGS = 15V MOSFET symbol VDS = 25V, ID = 42A VDD = 125V, ID = 42A, VGS = 10Ve Conditions and center of die contact VDD = 200V, VGS = 15V, RG= 4.7Ω VDS = 200V, RG= 4.7Ω, TJ = 25°C L = 220nH, C= 0.4µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 100°C VDS = 25V VDD = 125V, VGS = 10VÃe ID = 42A RG = 5.0Ω See Fig. 22 |
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