A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/3

Specifications are subject to change without notice.

SYMBOL

MINIMUM TYPICAL MAXIMUM

UNITS

45

V

25

V

3.0

V

10

200

---

f = 1.0 MHz

20

pF

f = 845 MHz

8.5

-50

dB

dBc

TEST CIRCUIT

NPN SILICON RF POWER TRANSISTOR

SD1732

DESCRIPTION:

The

RF power transistor designed for

Class-A, UHF and band IV and V TV

transmitter applications. It utilizes

emitter ballasting for high reliability and

ruggedness.

FEATURES:

• Common Emitter: Class-A, 25 V

• P

• Omnigold™ Metalization System

• Internal input matching

MAXIMUM RATINGS

2 x 2.6 A

45 V

25 V

4.0 V

-65 °C to +200 °C

-65 °C to +150 °C

θ

JC

2.5 °C/W

PACKAGE STYLE .250 BAL FLG

1 = COLLECTOR

2 = BASE

3 = EMITTER

MIN IM U M

inch es / m m

.055 / 1.40

.243 / 6.17

.630 / 16.00

B

C

D

E

F

G

A

M AXIM U M

.670 / 17 .0 1

.255 / 6.48

inche s / m m

.125 / 3 .18

H

DIM

K

L

I

J

.315 / 8.00

.002 / 0.05

.075 1.91

.327 / 8.31

.006 / 0.15

.095 / 2.41

N

M

.2 45 / 6.22

.257 / 6.53

.060 / 1.52

.092 / 2.34

.055 / 1.40

.065 / 1.65

.190 / 4.83

K

.0 20 x 45°

J

F

E

D

C

H

I

G

L

M

.050 x 45°

N

B

A

Ø .130 N O M .

.065 / 1.65

.555 / 14.10

.739 / 18.77

.565 / 14 .3 5

.750 / 19 .0 5

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1

2

2

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