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LL5819 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # LL5819
Description  SCHOTTKY BARRIER
PDF  2 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

LL5819 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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LL5817 - LL5819
SCHOTTKY BARRIER
RECTIFIER DIODES
PRV : 20 - 40 Volts
IO : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* High efficiency
* Low power loss
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : MELF, Plastic
* Terminals : Solderable per MIL-STD-202, Method 208
* Polarity : Color band
* Approx Weight : 0.25 grams
* Mounting Position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
LL5817
LL5818
LL5819
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
V
Maximum RMS Voltage
VRMS
14
21
28
V
Maximum DC Blocking Voltage
VDC
20
30
40
V
Maximum Average Forward Current
0.375", 9.5mm Lead Length at TL = 90
°C
Maximum Peak Forward Surge Current,
8.3ms single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 A
VF
0.45
0.55
0.60
V
Maximum Reverse Current
IR
1.0 (Ta = 25
°C)
mA
at Rated DC Blocking Voltage
IR(H)
10 (Ta = 100°C)
mA
Typical Thermal Resistance (Note 1)
R
θJA
80
°C/W
Typical Junction Capacitance (Note 2)
CJ
110
pF
Junction Temperature Range
TJ
- 65 to + 125
°C
Storage Temperature Range
TSTG
- 65 to + 125
°C
Notes :
(1) Thermal Resistance from junction to ambient
(2) Measured at 1 MHz and applied reverse voltage of 4.0 volts.
Page 1 of 2
Rev. 01 : April, 2005
A
A
25
RATING
IFSM
IF(AV)
1.0
Dimensions in inches and ( millimeters )
MELF
0.205(5.2)
0.189(4.8)
φ 0.102 (2.6)
0.094 (2.4)
0.022(0.55)
Cathode Mark


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