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LL5819 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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LL5819 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() LL5817 - LL5819 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : MELF, Plastic * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : Color band * Approx Weight : 0.25 grams * Mounting Position : Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL LL5817 LL5818 LL5819 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 V Maximum RMS Voltage VRMS 14 21 28 V Maximum DC Blocking Voltage VDC 20 30 40 V Maximum Average Forward Current 0.375", 9.5mm Lead Length at TL = 90 °C Maximum Peak Forward Surge Current, 8.3ms single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 A VF 0.45 0.55 0.60 V Maximum Reverse Current IR 1.0 (Ta = 25 °C) mA at Rated DC Blocking Voltage IR(H) 10 (Ta = 100°C) mA Typical Thermal Resistance (Note 1) R θJA 80 °C/W Typical Junction Capacitance (Note 2) CJ 110 pF Junction Temperature Range TJ - 65 to + 125 °C Storage Temperature Range TSTG - 65 to + 125 °C Notes : (1) Thermal Resistance from junction to ambient (2) Measured at 1 MHz and applied reverse voltage of 4.0 volts. Page 1 of 2 Rev. 01 : April, 2005 A A 25 RATING IFSM IF(AV) 1.0 Dimensions in inches and ( millimeters ) MELF 0.205(5.2) 0.189(4.8) φ 0.102 (2.6) 0.094 (2.4) 0.022(0.55) Cathode Mark |
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