2N2896 datasheet(2/2 Pages) SEME-LAB

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2N2896

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Document Number 5976

Issue 1

Parameter

Test Conditions

Min. Typ. Max. Unit.

V(BR)CER Collector - Emitter Breakdown Voltage (1)

IC = 100mA ,RBE = 10Ω

140

VCEO(sus) Collector - Emitter Sustaining Voltage (1)

IC = 100mA , IB =0

V(BR)CBO Collector - Base Breakdown Voltage

IC = 0.1mA , IE =0

140

V(BR)EBO Emitter - Base Breakdown Voltage

IE = 0.1mA , IC =0

ICBO

Colllector Cut Off Current

VCB = 60V , IE = 0

VCB = 90V , IE = 0

VCB = 90V , IE = 0 TA =150 °C

0.01

µA

IEBO

Emitter Cut Off Current

VEB = 5V , IC = 0

0.01

µA

hFE

DC Current

IC =1mA, VCE = 10V

IC =10mA, VCE = 10V TA = -55 °C

IC =150mA, VCE = 10V

200

VCE(sat)

Collector - Emitter Saturation Voltage (1)

IC =150mA , IB = 15mA

0.6

VBE(sat)

Base - Emitter Saturation Voltage (1)

IC =150mA , IB = 15A

1.2

Current Gain - Bandwith Product

IC =50mA ,VCE =10V, f=100 MHZ

120

MHZ

Cobo

Output Capacitance

VCB =10V , IE = 0 , f=1 MHZ

Cibo

Input Capacitance

VEB =0.5V , IC = 0 , f=1 MHZ

hFE

Small-Signal Current Gain

IC =5mA, VCE = 5V, f=1 KHZ

275

ELECTRICAL CHARACTERISTICS Continued (TA = 25°C unless otherwise stated)

1) Pulse test : Pulse Width < 300

µs ,Duty Cycle < 2%

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