SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

2N4239

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8369

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

IB = 0

80

V

VCE = 100V

VBE = -1.5V

100

nA

VCE = 70V

VBE = -1.5V

ICEX

Collector Cut-Off Current

TA = 150°C

25

µA

ICBO

Collector Cut-Off Current

VCB = 100V

IE = 0

100

nA

IEBO

Emitter Cut-Off Current

VEB = 6V

IC = 0

0.5

mA

IC = 100mA

VCE = 1.0V

30

IC = 250mA

VCE = 1.0V

30

150

TA = -55°C

15

hFE

(1)

Forward-current transfer

ratio

IC = 500mA

VCE = 1.0V

30

IC = 500mA

IB = 50mA

0.3

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 1.0A

IB = 0.1A

0.6

IC = 500mA

IB = 50mA

1.0

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 1.0A

IB = 0.1A

1.5

V

DYNAMIC CHARACTERISTICS

IC = 100mA

VCE = 10V

| hfe |

Small signal forward-current

transfer ratio

f = 10MHz

3.0

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

100

pF

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%