SILICON EPITAXIAL

PNP TRANSISTOR

2N5883

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 5981

Issue 3

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = -50mA

-60

V

VCE = -60V

VBE = 1.5V

-1.0

ICEV

Collector Cut-Off Current

TC = 150°C

-10

ICEO

Collector Cut-Off Current

VCE = -30V

IB = 0

-2

ICBO

Collector Cut-Off Current

VCB = -60V

IE = 0

-1.0

IEBO

Emitter Cut-Off Current

VEB = -5V

IC = 0

-1.0

mA

IC = -3A

VCE = -4V

35

IC = -10A

VCE = -4V

20

100

hFE

(1)

Forward-current transfer

ratio

IC = -25A

VCE = -4V

4

VBE

(1)

Base-Emitter Voltage

IC = -10A

VCE = -4V

-1.5

IC = -15A

IB = -1.5A

-1.0

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = -25A

IB = -6.25A

-4

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = -25A

IB = -6.25A

-2.5

V

DYNAMIC CHARACTERISTICS

IC = -1.0A

VCE = -10V

fT

Transition Frequency

f = 1.0MHz

4

MHz

VCB = -10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

1000

pF

tr

Rise Time

0.7

ts

Storage Time

1.0

tf

Fall Time

VCC = -30V

IC = -10A

IB1 = -IB2 = -1.0A

0.8

µs

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%